Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).
نویسندگان
چکیده
The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have Ge lattice constants and a (105) facet structure. Results suggest that these clusters provide an easy kinetic path for formation of "macroscopic" Ge islands.
منابع مشابه
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عنوان ژورنال:
- Physical review letters
دوره 65 8 شماره
صفحات -
تاریخ انتشار 1990